Electrical charge transport and surface morphology of In₂S₃ thin films doped with Cu

Abstract

In the present work, the transport properties and morphology through tunneling structures were investigated, where the rough In₂S₃ thin films are the interfaces of these structures. In₂S₃ thin films were doped experimentally with Copper (Cu) and their morphology was studied by using the atomic force microscopic images at different temperatures (30, 55, 70, and 85$°\mathrm{C}$). The results show that conductivity of the samples is strongly influenced by Cu doping content at different temperatures. Also, the transmission probability and current density of these samples were investigated numerically. The results show the maximum scattering component of transmission probability at temperature 30$°\mathrm{C},$ for In₂S₃ thin films and 70$°\mathrm{C},$ for CuIn₂S₃ thin films. By the results, increasing of the [Cu/In] molar ratios will lead to an increase in the transmission probability and current density of these thin films.

Keywords:

• AFM
• charge transport
• current density
• In₂S₃ layers
• roughness

Additional information

Funding

We thank from West Tehran Branch of Islamic Azad University for financial support of this article.