Study of dielectric relaxation and thermally activated a.c. conduction in glassy Se₇₀Te₃₀ and Se₇₀Te₂₈M₂ (M = Ag, Zn and Cd) alloys

Peer review under responsibility of The Ceramic Society of Japan and the Korean Ceramic Society.

Figures & data

Fig. 1 (a–d) Frequency dependent dielectric constant, ɛ′ for glassy Se₇₀Te₃₀ and Se₇₀Te₂₈M₂ (M = Ag, Zn, Cd) alloys.

Fig. 2 (a–d) Frequency dependent dielectric loss, ɛ″ for glassy Se₇₀Te₃₀ and Se₇₀Te₂₈M₂ (M = Ag, Zn, Cd) alloys.

Fig. 3 (a–d) Conductivity, as a function frequency for glassy Se₇₀Te₃₀ and Se₇₀Te₂₈M₂ (M = Ag, Zn, Cd) alloys.

Fig. 4 Frequency exponent, ‘s’ as a function of temperature for glassy Se₇₀Te₃₀ and Se₇₀Te₂₈M₂ (M = Ag, Zn, Cd) alloys.

Fig. 5 (a–d) Conductivity, s (S/m) as a function of inverse temperature for glassy Se₇₀Te₃₀ and Se₇₀Te₂₈M₂ (M = Ag, Zn, Cd) alloys.

Table 1 Estimated values of density of defect states (DOS) and the distance of inter-site separation (R_ω present Se–Te and = Ag, Zn, Cd) alloys.

Systems	DOS (cm^3)	Rω (nm)
Se70Te30	1.1 × 10^17	5.7
Se70Te28Ag2	3.9 × 10^19	2.7
Se70Te28Zn2	8.7 × 10^18	3.4
Se70Te28Cd2	6.1 × 10^18	4.5