Conductivity and thermoelectric properties of nanostructure tin oxide thin films

Peer review under responsibility of University of Bahrain.

Figures & data

Figure 1 XRD pattern of prepared films deposited on glass substrates (a) SnO₂ doped with Fe (b) SnO₂ doped with Cu.

Table 1 Summary of the XRD parameters and crystallite size mean grain size of samples for peak (1 1 0).

Peak	Crystallite size (nm)
SnO2 (Timonah and Chunhui, 2010)	30
SnO2:Fe	19.75
SnO2:Cu	26.57

Figure 2 AFM images of prepared films deposited on glass substrates (a) SnO₂ doped with Fe (b) SnO₂ doped with Cu.

Figure 3 The variation of the carrier concentration with temperature (a) SnO₂ doped with Fe (b) SnO₂ doped with Cu.

Table 2 Density of states at the Fermi level of samples.

N(EF) (eV^−1m^−3)	T = 150 °C	T = 200 °C	T = 250 °C
SnO2:Fe	1.77944E + 19	1.33571E + 20	1.25162E + 21
SnO2:Cu	2.65025E + 19	3.47235E + 19	8.73979E + 19

Table 3 Activation energy for all samples at region I and II.

Ea (eV)	Region (1)	Region (2)
SnO2:Fe	0.2827	0.1727
SnO2:Cu	0.3286	0.1795

Figure 4 (a) The variation of the potential with Temperature difference, (b) the variation of the Seebeck coefficient with temperature.

Figure 5 (a) The variation of the carrier concentration with temperature, (b) variation of charge carrier mobility with temperature.

Figure 6 (a) The variation of the potential with temperature difference, (b) the variation of the Seebeck coefficient with temperature.