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Ferroelectrics Volume 303, 2004 - Issue 1
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Original Articles

Resistivity Characteristics of Plastic Multi-Barrier ITO Film by the Bending Process

J.-B. PARK Department of Electrical & Electronic Engineering College of Engineering Yonsei University, 134 Shinchon-dong, Seodaemoon-ku, Seoul, Korea, 120-749
,
J.-Y. HWANG Department of Electrical & Electronic Engineering College of Engineering Yonsei University, 134 Shinchon-dong, Seodaemoon-ku, Seoul, Korea, 120-749
,
D.-S. SEO Department of Electrical & Electronic Engineering College of Engineering Yonsei University, 134 Shinchon-dong, Seodaemoon-ku, Seoul, Korea, 120-749
,
S.-K. PARK Information Display Research Center Korea Electronics Technology Institute Pyungtaek, Kyunggi, Korea, 442-860
,
D.-G. MOON Information Display Research Center Korea Electronics Technology Institute Pyungtaek, Kyunggi, Korea, 442-860
&
J.-I. HAN Information Display Research Center Korea Electronics Technology Institute Pyungtaek, Kyunggi, Korea, 442-860
Pages 155-158 | Received 01 Aug 2003, Accepted 01 Jan 2004, Published online: 08 Sep 2010
 
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Abstract

We studied transmittance and electrical resistivity characteristics regarding bending of four other multi-barrier Indium tin oxide (ITO) film. Transmission showed there was about large 90% transmission above 550 nm wavelength at three multi-barrier structures. But, both-side hard coated structure showed relatively low 75% transmission above 550 nm wavelength. Also, resistivity change of four other multi-barrier film showed there was the lowest change at one-side hardcoat structure and the resistivity change of the center was larger than that of the edge.

Acknowledgement

This work was supported by National Research Laboratory program (M1-0203-00-0008).

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