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Ferroelectrics Volume 304, 2004 - Issue 1
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Original Articles

Ferroelectric Properties of SBN Thin Films Deposited by Ion Beam Sputtering

DONG GUN LEE Department of Materials Science and Engineering Yeungnam University, Gyeongsan, Korea, 712-749
,
JAE HOON JANG Department of Materials Science and Engineering Yeungnam University, Gyeongsan, Korea, 712-749
,
JEONG-JOO KIM Department of Inorganic Materials Engineering Kyungpook National University, Daegu, Korea, 702-701
,
SANG-HEE CHO Department of Inorganic Materials Engineering Kyungpook National University, Daegu, Korea, 702-701
&
HEE YOUNG LEE Department of Materials Science and Engineering Yeungnam University, Gyeongsan, Korea, 712-749
Pages 173-177 | Received 01 Aug 2003, Accepted 01 Jan 2004, Published online: 07 Sep 2010
 
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Abstract

Strontium barium niobate thin films with nominal composition corresponding to Sr0.30Ba0.70Nb2O6 (SBN30) were deposited onto Pt/Ti/SiO2/Si(100) substrate by ion beam sputter deposition (IBSD) technique. D–E hysteresis loops for Pt/SBN30/Pt capacitor samples were saturated after annealing treatment in air above 750°C, with remanent polarization (2Pr) value of about 22 μC/cm2 and coercive field (Ec) of about 128 kV/cm. Relative permittivity and leakage current characteristics were also determined from C–V and I–V measurements.

Acknowledgement

This work was supported by grant No. R01-2000-00233 from the basic research program of the Korea Science and Engineering Foundation.

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