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SECTION F: THIN FILMS

Construction of the (Y,Yb)MnO3/HfO2 Stacking Layers through the Chemical Solution Process

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Pages 196-200 | Received 03 Sep 2006, Accepted 11 Sep 2006, Published online: 07 Nov 2007
 

Abstract

Pt/Y 0.5 Yb 0.5 MnO 3 /HfO 2 /Si structures were constructed by chemical solution deposition. The Y 0.5 Yb 0.5 MnO 3 films were prepared using the solutions with different concentrations. The grain size and the degree of the c-axis orientation of the Y 0.5 Yb 0.5 MnO 3 films changed with the concentration of solutions used. The clockwise C-V hysteresis induced by ferroelectric polarization switching was observed and the memory window of Pt/Y 0.5 Yb 0.5 MnO 3 /HfO 2 /Si structures changed with the concentration of solutions used. The retention time of Pt/Y 0.5 Yb 0.5 MnO 3 /HfO 2 /Si structures were over 104s.

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