Predicted Performance of Ferroelectric Memory Capacitors under Mechanical Constraint

Abstract

The performance of one and two-dimensional ferroelectric memory capacitors characterized by the hysteresis of applied electric field versus the surface charge density is investigated using the finite element method. Sensitivity of the electrical hysteresis of the 2D capacitor constrained by compliant layers to selected geometrical variables is explored. The remnant polarization and the coercive filed are compared with those of a free-standing film and a film fully constrained by the substrate. The aspect ratio can significantly influence the clamping behavior and thus the remnant polarization of the capacitor.

Keywords:

• Crystal plasticity
• FeRAM
• ferroelectric
• polarization
• thin film