Abstract
The Ferroelectricity maintained in ultrathin films could suffer from bad polarization retention due to epitaxial stresses and interfacial effects. It makes a great difference to incorporate ultrathin PZT films with a few nanometer-thick Al2O3. The ferroelectric properties, such as fatigue and retention, show obviously changes in our experiment. The ultra thin Al2O3 layer which acts as a tunnel switch in the progress of domain switching affects ferroelectric properties in many ways.
Acknowledgment
This work was supported by National Natural Science Foundation of China (No. 60776054), Shanghai Key Program (No. 08JC1402100), and the Program for Professor of Special Appointment (Eastern Scholar) at Shanghai.