Low-Frequency Dielectric Relaxation and Ferroelectric Properties of Nd- and Nd/V-Doped Bismuth Titanate Ceramics

Abstract

Nd/V-doped Bi₄Ti₃O₁₂ ceramics (Bi_3.2Nd_0.8Ti_3–xV_xO₁₂, x = 0.0∼0.15) were synthesized by a solid-state reaction method. The effect of Nd/V doping on the dielectric and ferroelectric properties were investigated. Nd/V doping caused a decrease in the Curie temperature T_c and the strong low-frequency dielectric dispersion of Bi₄Ti₃O₁₂. Further, the maximum remnant polarization of the Nd/V-doped ceramics reached a value of P _r = ∼12.05 μC/cm² at x = 0.03∼0.05, which was higher than that of Bi₄Ti₃O₁₂, namely, 5.2 μC/cm². Appropriate Nd/V codoping at A and B sites led to a decrease in the electrical conductivity and an improvement in the ferroelectric properties of Bi₄Ti₃O₁₂ ceramics.

Keywords:

• FRAM
• BIT
• BLSF
• dielectric
• ferroelectric
• P-E hysteresis loop
• ion doping

Acknowledgments

This work was supported by National Research Foundation of Korea Grant funded by the Korean Government (2009-0072488). Also supported by Priority Research Centers Program through the National Research Foundation of Korea (NRF), funded by Ministry of Education, Science and Technology (2009-0093818).