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Ferroelectrics Volume 405, 2010 - Issue 1
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SECTION G: FERROELECTRIC THIN AND THICK FILMS

Optimization of Pt and PZT Films for Ferroelectric-Gate Thin Film Transistors

Phan Trong Tue Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Nomi, Ishikawa, 923-1292, Japan
,
Takaaki Miyasako Japan Science and Technology Agency, ERATO, Shimoda Nano-Liquid Process Project, 2-5-3 Asahidai, Nomi, Ishikawa, 923-1211, Japan
,
Bui Nguyen Quoc Trinh Japan Science and Technology Agency, ERATO, Shimoda Nano-Liquid Process Project, 2-5-3 Asahidai, Nomi, Ishikawa, 923-1211, Japan
,
Jinwang Li Japan Science and Technology Agency, ERATO, Shimoda Nano-Liquid Process Project, 2-5-3 Asahidai, Nomi, Ishikawa, 923-1211, Japan
,
Eisuke Tokumitsu Japan Science and Technology Agency, ERATO, Shimoda Nano-Liquid Process Project, 2-5-3 Asahidai, Nomi, Ishikawa, 923-1211, Japan; Precision and Intelligence Laboratory, Tokyo Institute of Technology, 4259-R2-19 Nagatsuta, Midori-ku, Yokohama, 226-8503, Japan
&
Tatsuya Shimoda Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Nomi, Ishikawa, 923-1292, Japan; Japan Science and Technology Agency, ERATO, Shimoda Nano-Liquid Process Project, 2-5-3 Asahidai, Nomi, Ishikawa, 923-1211, Japan
Pages 281-291 | Received 23 Aug 2009, Accepted 19 Oct 2009, Published online: 01 Dec 2010
 
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Abstract

The polycrystalline Pt film with an excellent (111) orientation and a small grain size of about 30 nm was successfully prepared on a SiO2/Si substrate by the new structured-sputtering system. By optimizing annealing process and using the highly (111)-oriented Pt film as a bottom electrode, an epitaxial-grade (111)-oriented PZT film was successfully prepared by the sol-gel method. Operation of the ferroelectric-gate thin film transistor (FGT) with indium-tin-oxide (ITO) channel, which was based on the optimum Pt and PZT films, has been verified. The FGT device exhibited good properties and performance with high “on/off” current ratio (∼105), adequate memory window (1.2 V) and small swing factor (∼88 mV/decade).

Acknowledgment

This work was partially supported by the Shimoda Nano-Liquid Project, ERATO, Japan Science and Technology Agency.

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