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Ferroelectrics Volume 406, 2010 - Issue 1
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SECTION G2: FERROELECTRIC THIN AND THICK FILMS

Improved Ferroelectric Properties of (111)-Oriented PbZr0.52Ti0.48O3 Thin Films on SrRuO3/Pt Hybrid Electrodes

Li Li State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronics Science and Technology of China, Chengdu, 610054, People's Republic of China
,
Jun Zhu State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronics Science and Technology of China, Chengdu, 610054, People's Republic of China
,
Wenbo Luo State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronics Science and Technology of China, Chengdu, 610054, People's Republic of China
&
Yanrong Li State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronics Science and Technology of China, Chengdu, 610054, People's Republic of China
Pages 121-129 | Received 23 Aug 2009, Accepted 23 Sep 2009, Published online: 01 Dec 2010
 
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Abstract

(111) oriented PbZr0.52Ti0.48O3 thin films were epitaxially grown on SrRuO3 and SrRuO3/Pt electrode coated Al2O3(0001) substrates by pulsed-laser deposition, respectively. The X-ray diffraction analysis revealed that PZT films on SrRuO3/Pt electrode had better crystal quality than the films on SrRuO3 electrode. Compared to the SrRuO3 electrode, the SrRuO3/Pt hybrid electrode could significantly improve ferroelectric properties of PbZr0.52Ti0.48O3 films with 1 times larger remnant polarization (2Pr = 40.1 μC/cm2), 0.4 times smaller coercive field (2Ec = 40 kV/cm), better fatigue endurance (8.8% degradation at 1011 switching cycles) and lower leakage current density (10−8 A/cm2 at an applied voltage of 5 V). The reliable ferroelectric properties in PbZr0.52Ti0.48O3 films with SrRuO3/Pt hybrid electrode indicate that the combination of the excellent fatigue behavior using SrRuO3 electrodes with the low leakage currents with Pt electrodes can be suitable for the application of integrated ferroelectric devices.

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