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Ferroelectrics Volume 399, 2010 - Issue 1
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Original Articles

Effect of Polarization State on Photovoltaic Properties of Ferroelectric Semiconductor Sn2P2S6 Films

A. A. Bogomolov Department of Ferroelectrics and Piezoelectrics Physics, Tver State University, 170002, Tver, Russia
,
A. V. Solnyshkin Department of Ferroelectrics and Piezoelectrics Physics, Tver State University, 170002, Tver, Russia
,
A. S. Troshkin Department of Ferroelectrics and Piezoelectrics Physics, Tver State University, 170002, Tver, Russia
,
I. P. Raevsky Research Institute of Physics and Physics Department of Southern Federal University, 344090, Rostov-on-Don, Russia
,
D. N. Sandjiev Research Institute of Physics and Physics Department of Southern Federal University, 344090, Rostov-on-Don, Russia
&
V. Yu. Shonov Research Institute of Physics and Physics Department of Southern Federal University, 344090, Rostov-on-Don, Russia
Pages 76-82 | Received 16 Sep 2009, Accepted 16 Mar 2010, Published online: 23 Jun 2010
 
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Abstract

In this work, the experimental results of pyroelectric and photovoltaic responses of semiconductor-ferroelectric Sn2P2S6 films are presented for both preliminary polarized samples and films under external electric field. The measurements were carried out in short-circuit conditions under illumination of the Al/Sn2P2S6/Al structure by modulated laser light with λ = 6328 Å. It is shown that varying the intensity of monochromatic laser irradiation by focusing enables to separate the pyroelectric and photovoltaic responses of ferroelectric semiconductors.

Acknowledgments

This work was partially supported by the Russian Foundation for Basic Research (project No. 08-02-92006 NNS-a).

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