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Original Articles

Formation of single domain state and spontaneous backswitching in SBN single crystal

, , , , , & show all
Pages 149-156 | Received 29 Aug 2015, Accepted 30 Oct 2015, Published online: 15 Apr 2016
 

ABSTRACT

Formation of the single domain state and spontaneous backswitching have been studied in polar cut single crystals of relaxor ferroelectric strontium-barium niobate SrxBa1-xNb2O6 with x = 0.61. The piezoresponse force microscopy has been used for domain visualization. Two methods of creation of the single domain state were applied: (1) cyclic switching below freezing temperature and (2) cooling from the temperature corresponding to relaxor phase to room temperature in constant field. The domain structure, appearing as a result of spontaneous backswitching after fast removal of the external field, have been revealed and analyzed.

Acknowledgments

The equipment of the Ural Center for Shared Use “Modern Nanotechnology” UrFU was used.

Funding

The research was made possible in part by the Ministry of Education and Science of the Russian Federation (UID RFMEFI59414X0011), by RFBR (Grants 14-02-31864-mol-a and 16-02-00821-a) and by Government of the Russian Federation (Act 211, Agreement 02.A03.21.0006).

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