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Ferroelectrics Volume 551, 2019 - Issue 1
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Articles

Structure and dielectric relaxor behavior of Li-doped Bi(Na,K)TiO3-based piezoceramics

Xiaoming ChenSchool of Materials and Metallurgical Engineering, Guizhou Institute of Technology, Guiyang, PR China; ;College of Chemistry and Engineering, China West Normal University, Nanchong, PR China; Correspondence[email protected]
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Yunwen LiaoCollege of Chemistry and Engineering, China West Normal University, Nanchong, PR China; View further author information
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Yingsong XieSchool of Materials and Metallurgical Engineering, Guizhou Institute of Technology, Guiyang, PR China; View further author information
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Haiqi LuoSchool of Materials and Metallurgical Engineering, Guizhou Institute of Technology, Guiyang, PR China; View further author information
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Jianguo ZhuSchool of Material Science and Engineering, Sichuan University, Chengdu, PR ChinaView further author information
&
Dingquan XiaoSchool of Material Science and Engineering, Sichuan University, Chengdu, PR ChinaView further author information
Pages 32-39 | Received 05 Dec 2018, Accepted 13 Jun 2019, Published online: 03 Dec 2019
 
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Abstract

A kind of lead-free piezoelectric ceramic, Bi0.5(Na0.825K0.175)0.5TiO3 + x wt% Li2CO3 (abbreviated to BNKTL-x, x = 0–10.0), was prepared by the conventional solid-state reaction process. Effects of Li on the structure and relaxor characteristics of BNKTL-x ceramics were investigated. The results show that the BNKTL-x ceramics become considerably dense at relatively low sintering temperature. The introduction of Li leads to the significant increase of tetragonality and the shift of the phase boundary .The phase transition temperature of the BNKTL-x ceramics are enhanced by Li doping. Meanwhile, the relative permittivity εr and loss tangent tanδ show a strong temperature and frequency-dependent behavior.

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Funding

This work is supported by Natural Science Foundation of Guizhou Provincial Department of Education, China (Grant No. KY [2018]253) and college students of Guizhou Institute of Technology for innovation and entrepreneurship training program (Grant No. 2003007116111).

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