Investigation of the effects of rapid thermal annealing on the structural properties of lead zirconate-titanate thin films

Abstract

The purpose of this work is to study the effect of rapid thermal annealing (RTA) with halogen lamps on the structural and phase characteristics of lead zirconate-titanate (PZT) films. The PZT thin films with a thickness of 1.0 ± 0.1 μm were deposited by high-frequency reactive plasma sputtering in an oxygen atmosphere on oxidized silicon and silicon substrates with orientation (100). After deposition, the PZT films subjected to RTA at temperatures of 500 °C, 600 °C and 700 °C at a rate of 60 °C/s. The structural-phase composition of PZT films was determined with X-ray diffraction analysis. Studies of heterostructures with scanning electron microscopy methods have shown that increase in the temperature of the RTA leads to a qualitative change in the structural-phase state of the PZT film as compared to its initial state. This makes it possible effectively using of RTA in the formation of PZT films with specified parameters.

Keywords:

• PZT
• thin films
• rapid thermal annealing

Acknowledgments

The results were obtained using the equipment of the centers for collective usage “Microsystem Engineering and Integrated Sensory”, “Nanotechnologies” and Research Institute of Physics of Southern Federal University. The authors are grateful to A.S. Kamentsev for assistance in formation of PZT films, D.V. Strukov and A.A. Rozhko for obtaining and analysis of XRD patterns.

Additional information

Funding

Formation of PZT films and their SEM studies were supported by the Russian Foundation for Basic Research (RFBR) under Grant № 18-29-11019.