Noncritical behavior in Pb(In_1/2Nb_1/2)O₃-Pb(Mg_1/3Nb_2/3)O₃-PbTiO₃ relaxor ferroelectric crystals detected by acoustic emission method

Figures & data

Figure 1. The reconstructed plots of the maximum temperatures, T_m, of the real part of a dielectric constant, ɛ’, in dependence on a bias dc field, E, of the PIN-PMN-PT crystals Refs. [25, 26].

Figure 2. The plot of a temperature dependence of both the real part of a dielectric constant, ɛ’, and the AE count rate, $\dot{N},$ in absence of a bias dc field, E. Inset shows the frequency dependence of the real part of a dielectric constant, ɛ’.

Figure 3. The plot of all dependences of the intermediate temperature, T*, the maximum temperature, T_m, of the real part of a dielectric constant, ɛ’, the rhombohedral-cubic phase transition temperature, T_rc, in dependence on a bias dc field, E.

Figure 4. The plot of all dependences of the maximum temperature, T_m, of the real part of a dielectric constant, ɛ’, the rhombohedral-cubic phase transition temperature, T_rc, as well as the AE count rate $\dot{N}$ in dependence on a bias dc field, E.

Y. Chen et al., Temperature and electric field dependence of the dielectric property and domain evolution in [001]-oriented 0.34Pb(In1/2Nb1/2)O3–0.25Pb(Mg1/3Nb2/3)O3–0.41PbTiO3 single crystal, J. Appl. Phys. 109 (1), 014111 (2011). DOI: 10.1063/1.3525163.

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Y. Wan et al., Dielectric behavior and phase transition in [111]-oriented PIN–PMN–PT single crystals under DC bias, J. Adv. Dielect. 04 (01), 1450004 (2014). DOI: 10.1142/S2010135X14500040.

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