Conservative finite-difference scheme for the 2D problem of femtosecond laser pulse interaction with kink structure of high absorption in semiconductor

Figures & data

Figure 1. Setup for computer simulation of the femtosecond pulse interaction with a semiconductor. $E_x$, $E_y$ – external electric field strength (x, y are dimensionless spatial coordinates).

Figure 2. Square root from the intensity distribution of incident pulse (a) and a distribution of square root from the intensity along y-coordinate at beam centre on x-coordinate $(x=L_{xc})$ (b).

Figure 3. Qualitative dependence of the absorption coefficient from the free-electron concentration at various values of the parameters multiplication $\psi \xi$.

Figure 4. Template of the mesh function definition.

Figure 5. Distribution of square root from laser pulse intensity $|A{|}^2$ at time moment t = 0 (a),1.4 (b), 3.6(c), 5(d), 10(e), 20(f).

Figure 6. Square root from beam profile $|A{|}^2$ along y-coordinate at the beam axis on x-coordinate (x = 0.5) at time moment t = 0 (a), 1.4 (b), 3.6(c), 5(d), 10(e), 20(f).

Figure 7. Distribution of free-electron concentration n at time moment t = 3.2 (a), 3.4 (b), 3.6 (c), 4 (d), 5 (e), 10 (f).

Figure 8. Square root from beam profile $|A{|}^2$ along y-coordinate at the beam axis on x-coordinate (x = 0.5) at time moment t = 1.4 (a), 3 (b), 3.6(c), 5(d), 10(e), 20(f).

Table 1. Invariants $Q\left(t_m\right)$ and $\overline{\overline{Q}}\left(t_m\right)$ values computed using formulas (79) and (184), correspondingly.

$t_m$	Invariant $Q\left(t_m\right)$	Invariant $\overline{\overline{Q}}\left(t_m\right)$
1.4	2.81732e−06	1.11856e−07
3.6	1.56882e−05	1.5281e−06
4	1.95336e−05	1.09616e−06
5	1.54824e−05	6.44219e−07
10	8.78868e−06	9.8865e−08