Abstract
The theory and design aspects of n-way in-phase power divider employing Goldfarb recombinant topology are described. The merits of this divider over conventional ones are also presented here. A microstrip version of five output port power divider is designed and developed with 1.7 mm Bakelite substrate to operate in S-band. The measured values of input VSWR, insertion loss, isolation, return loss and phase difference between output ports at different frequencies in S-band for the fabricated power divider are presented and discussed.
Acknowledgement
The authors are grateful to Mr Sanjiv Kumar, Centre for Education Technology, I.T., B.H.U., Varanasi-221005, India for generously typing the manuscript.