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Leaching

Effect of acetic acid on the leaching behavior of impurities in metallurgical grade silicon

, , , , , & show all
Pages 1257-1264 | Received 23 Aug 2016, Accepted 12 Jan 2017, Published online: 20 Mar 2017
 

ABSTRACT

To explore the potential of acid leaching in purification metallurgical grade silicon (MG-Si) for solar cells, the effect of acetic acid on the leaching behavior was investigated in the present work by focusing on the behavior of impurities affected by the addition of acetic acid to a conventional acid mixture composed of hydrochloric acid and hydrofluoric acid. The etching results reveal that the HCl–HF–CH3COOH mixture is a better lixiviant for dissolving impurity inclusions in MG-Si. The extraction yield of impurities in HCl–HF–CH3COOH leaching was found to increase by 7% compared to conventional HCl–HF leaching.

Funding

This study was supported by the National Natural Science Foundation of China (No. 51461027, 51334002) and Open fund of State Key Laboratory of Complex Nonferrous Metal Resources Clean Utilization (No. CNMRCUTS1406).

Additional information

Funding

This study was supported by the National Natural Science Foundation of China (No. 51461027, 51334002) and Open fund of State Key Laboratory of Complex Nonferrous Metal Resources Clean Utilization (No. CNMRCUTS1406).

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