193
Views
1
CrossRef citations to date
0
Altmetric
Articles

Computer Model for EDFA Dynamics Over 1525–1560 nm Band Using a Novel Multi-Wavelength MATLAB Simulink Test Bed for 8-Channels

&
Pages 814-831 | Published online: 05 Oct 2017
 

ABSTRACT

A novel erbium-doped fibre amplifier (EDFA) test bed is designed using the dominant technical MATLAB Simulink platform to characterize gain, noise figure and amplified spontaneous emission (ASE) power variations of a forward pumped EDFA operating as functions of amplifier length, injected pump power, signal input power and doping density in the C-band (1525–1560 nm). The numerical modelling of the rate and propagation equations is done. The Simulink model for two-level-based analysis is designed to investigate the dynamic characteristics of an EDFA. A significant addition to the model is the ability to handle multiple channels using the absorption and emission coefficients that vary as per different specifications and the quantum well laser is being modelled to be applied as the pump source. The results are shown and analyzed graphically for designated simulation environment that accurately represents EDFA performance metrics such as gain, population inversion factor , noise figure, quantum conversion efficiency and power conversion efficiency. The present model can be implemented successfully as a test bed to study the EDFA dynamics over the entire third optical communication bandwidth (1525–1690 nm) with the ability to analyze and optimize all the parameters to achieve the desired operating performance before actual physical designing of device as per the application.

Additional information

Notes on contributors

Reena Sharma

Reena Sharma received the MTech degree in electronics & communication engineering from National Institute of Technology, Kurukshetra, Haryana in 2010. She is pursuing PhD from Electronics Engineering Department of Indian Institute of Technology (Indian School of Mines) Dhanbad. Her area of interest includes optical fiber communication.

E-mail: [email protected]

Sanjeev Kumar Raghuwanshi

Sanjeev Kumar Raghuwanshi received his master's degree in solid state technology from Indian Institute of Technology, Kharagpur, in January 2002. Since July 2009, he has been obtained PhD degree in the field of optics from the Department of Electrical Communication Engineering of Indian Institute of Science, Bangalore, India. He is an assistant professor in Electronics Engineering Department of Indian Institute of Technology (Indian School of Mines) Dhanbad, India. He was the postdoctoral research fellow during 2014–2015 at Instrumentation and Sensor Division, School of Engineering and Mathematical Sciences, City University London, Northampton Square, London. He received the Erusmus Mundus Scholarship for his postdoctoral study. He has been published over 160 papers in very reputed journals and conferences. He had been the visiting scientist during June 2014–July 2014 at National United University Miaoli, Taiwan. He is a fellow of the Optical Society of India (OSI), life member of IETE, member of IEEE (USA) and a life member of the International Academy of Physics Sciences.

E-mail: [email protected]

Log in via your institution

Log in to Taylor & Francis Online

PDF download + Online access

  • 48 hours access to article PDF & online version
  • Article PDF can be downloaded
  • Article PDF can be printed
USD 61.00 Add to cart

Issue Purchase

  • 30 days online access to complete issue
  • Article PDFs can be downloaded
  • Article PDFs can be printed
USD 100.00 Add to cart

* Local tax will be added as applicable

Related Research

People also read lists articles that other readers of this article have read.

Recommended articles lists articles that we recommend and is powered by our AI driven recommendation engine.

Cited by lists all citing articles based on Crossref citations.
Articles with the Crossref icon will open in a new tab.