On the Capacitance of Piezoelectric Metal–Insulator–Semiconductor Junctions

Abstract

We study the capacitance of piezoelectric metal–insulator–semiconductor junctions. The linearized macroscopic theories of piezoelectric dielectrics and semiconductors are used. An analytical solution is obtained with an explicit expression for the junction capacitance. The contribution from the semiconductor part is characterized by the Debye length. When the semiconductor part is long compared to the Debye length, the junction capacitance can be written as a serial connection of two capacitors of the insulator and semiconductor parts. Because of piezoelectric coupling, a charge-stress coefficient is introduced to describe the junction behavior completely.

Keywords:

• Piezoelectric
• insulator
• semiconductor
• capacitance
• piezotronic

Additional information

Funding

This work was supported by the National Natural Science Foundation of China (Nos. 11672141 and 11972199), and the K. C. Wong Magana Fund through Ningbo University.