A high output power V-band GaAs HEMT push–pull power amplifier using meandering baluns technology

Abstract

A broadband, high saturation output power 0.15-μm gate length GaAs pseudomorphic high-electron mobility transistor push-pull V-band power amplifier has been demonstrated using meandering balun designs. Two meandering low-loss planar three-coupled-line baluns were used to form push–pull mechanism for both stages. The meandering baluns provide 180° differential outputs from the applied single-ended input at the V-band and the size was reduced for 23% compared to traditional design. The proposed push–pull amplifier achieved a peak small-signal gain of 16.8 dB at 58 GHz, a 3 dB bandwidth of 55–62 GHz, and a peak power added efficiency of 13.8%.

Acknowledgment

The authors wish to thank the facilities support from High Speed Intelligent Communication (HSIC) Research Center, Healthy Aging Research Center (HARC) in Chang Gung University and National Nano Device Laboratories, Taiwan.