Figures & data
Figure 4. Current distribution at the rejection frequency of 3.725 GHz for (a) the spurline structure and (b) embedded spurline structure prototype.
![Figure 4. Current distribution at the rejection frequency of 3.725 GHz for (a) the spurline structure and (b) embedded spurline structure prototype.](/cms/asset/0fd27f06-9f2d-42d7-aef2-0e7e68c73f22/tewa_a_1591308_f0004_oc.jpg)
Figure 5. The effects of (a) gap , and (b) resonator width
, for the notch characteristics of the embedded spurline unit, and (c) current distributions at a stopband frequency of 3.725 GHz.
![Figure 5. The effects of (a) gap G1, and (b) resonator width w2, for the notch characteristics of the embedded spurline unit, and (c) current distributions at a stopband frequency of 3.725 GHz.](/cms/asset/ba624abb-6db9-42c7-b21b-97edfccaefb6/tewa_a_1591308_f0005_oc.jpg)
Figure 6. Comparison of structures with two embedded spurline units (a) in series and (b) In parallel, and (c) transmission, and (d) Current distributions.
![Figure 6. Comparison of structures with two embedded spurline units (a) in series and (b) In parallel, and (c) transmission|S21|, and (d) Current distributions.](/cms/asset/407688db-acf3-450b-880b-7a0139485433/tewa_a_1591308_f0006_oc.jpg)
Figure 7. (a) The transmission characteristics of the embedded spurline unit, and (b) Current distributions at the rejection frequency, when varying the LC dielectric loss tangent .
![Figure 7. (a) The transmission characteristics of the embedded spurline unit, and (b) Current distributions at the rejection frequency, when varying the LC dielectric loss tangent tanδ.](/cms/asset/1ec3ee08-5ebc-4eb1-bf0c-c909f850396f/tewa_a_1591308_f0007_oc.jpg)
Figure 9. Measured results of the device with respect to the LC bias voltage: (a) Transmission, (b) stopband rejection frequency, and (c) stopband 3 dB bandwidth and Q factor.
![Figure 9. Measured results of the device with respect to the LC bias voltage: (a) Transmission|S21|, (b) stopband rejection frequency, and (c) stopband 3 dB bandwidth and Q factor.](/cms/asset/6b78496c-705b-49b5-b4c9-8ff5e6cdd150/tewa_a_1591308_f0009_oc.jpg)
Figure 10. Measured results of devices with three LC layer thicknesses: (a) Transmission under 0 and 20 Vrms bias voltage, and (b) stopband 3 dB bandwidth with respect to various LC bias voltages.
![Figure 10. Measured results of devices with three LC layer thicknesses: (a) Transmission |S21| under 0 and 20 Vrms bias voltage, and (b) stopband 3 dB bandwidth with respect to various LC bias voltages.](/cms/asset/8e380bfb-2fdd-4cb4-a96d-7499369fdc5b/tewa_a_1591308_f0010_oc.jpg)