Mode matching analysis of a novel transmission line with two centrosymmetric longitudinal slots

Abstract

In this paper, the mode matching (MM) method is applied to analyze the dispersion of the newly proposed transmission line (TL), centrosymmetric double-slotted line (CSDSL). For simplicity, the lateral metallic vias are replaced with the electric walls (EWs). Furthermore, four magnetic walls (MWs) are added to guarantee the boundary condition (BC) of MM. The proposed method is compared with the 3D electromagnetic field analysis (HFSS). The result shows a good agreement between the dispersions of the dominant mode obtained using MM method and HFSS. Additionally, the dispersions of the higher modes of CSDSL are also provided using the proposed method with convergent results.

KEYWORDS:

• Mode matching
• transmission line
• dispersion

Disclosure statement

No potential conflict of interest was reported by the author(s).

Additional information

Notes on contributors

Fangzhou Guo

Fangzhou Guo was born in Sichuan Province, China. He received the B.S. and Ph.D. degrees in electromagnetic field and microwave techniques from the University of Electronic Science and Technology of China, Chengdu, China, in 2012 and 2020, respectively. He was a visiting scholar in UC Davis, USA, from 2017 to 2019. He joined the School of Electronics and Information Engineering, Southwest Petroleum University, as a lecturer in September 2020. His current research interests are on modeling and optimization of microwave circuits and devices, metamaterials and communication for downhole while drilling.

Qingzhi Wu

Qingzhi Wu was born in Hei Longjiang Province, China. She received the B.S. degree from the University of Electronic Science and Technology of China (UESTC) in 2013 and is currently working toward the Ph.D. degree in electromagnetic field and microwave techniques from the UESTC, Chengdu, China. Her current research interests on the microwave third-generation semiconductor power devices modeling, with particular focus on the physics-based modeling method and applications for GaN HEMTs.