Dislocation motion in silicon: the shuffle-glide controversy revisited

Abstract

Considering recently computed formation and migration energies of kinks on nondissociated dislocations, we have compared the relative mobilities of glide partial and shuffle perfect dislocations in silicon. We found that the latter should be more mobile over all the available stress range, invalidating the model of a stress driven transition between shuffle and glide dislocations. We discuss several hypotheses that may explain the experimental observations.

Keywords:

• dislocation
• semiconductors
• plasticity
• shuffle–glide
• silicon

Acknowledgements

The authors are grateful to Pr. Guy Vanderschaeve and Dr Amand George for critical reading of the manuscript. This work was supported by the SIMDIM project under contract N° ANR-06-BLAN-250.