Growth and characterisation of screen-printed CdSe films

Abstract

CdSe polycrystalline films have been prepared on ultra-clean glass substrates by a screen-printing technique and then annealed in air. The films prepared by this technique are comparatively thicker than those prepared by other, more sophisticated techniques and optimum conditions for preparing good quality screen-printed films have been found. The optical band gaps (E _g) of the films were determined by UV transmission spectroscopy. The zinc-blende structure of the films was confirmed by X-ray diffraction analysis. The Schottky barrier height and the ideality factor for Al/CdSe junctions were determined from current–voltage characteristics. The DC conductivity of the films was measured in vacuum by a two-probe technique.

Keywords:

• CdSe
• screen printing
• band gap
• barrier height
• X-ray diffraction
• electrical conductivity
• films
• II–VI semiconductors
• materials characterisations
• optical properties
• photovoltaics
• sintering

Acknowledgements

The authors are grateful to Dr Ajay Sharma (Director General, KIET, Gzb), Dr O.P. Jain (Director, KIET, Gzb) and Professor C.M. Batra (Head, Department of Applied Science & Humanities, KIET, Gzb) for constant support and encouragement during this work.