Suppression of irradiation effect on electrical properties of silicon diodes by iron in p-silicon

Figures & data

Figure 1. Schematic diagram showing Al/p-Si Schottky diodes with circular Schottky contacts (top surface) and ohmic contact (bottom).

Figure 2. ln(I)-V characteristics of the diodes fabricated on undoped (a) and Fe-doped (b) p-Si prior to irradiation and after irradiation.

Figure 3. Current ratio ($\mathrm{\Delta }I=\frac{I_{\text{unirra}}}{I_{\text{irra}}}$) against voltage (V) for undoped and Fe-doped p-Si diode. Inset: Rescaled ΔI against voltage (V) plot for Fe-doped p-Si diode.

Table 1. The diode parameters for undoped and Fe-doped p-Si diodes prior to and after proton-irradiation.

Diodes		${\mathit{I}}_{\mathbf{s}}$(nA)	$\mathit{\eta }$	${\varphi }_{\mathbf{b}}$ (eV)
Undoped p-Si	Unirradiated	78.96	2.23	0.66
	Irradiated	0.03	5.67	0.86
Fe-doped p-Si	Unirradiated	2270	2.63	0.57
	Irradiated	125	2.73	0.64

Figure 4. Forward bias I-V characteristics of the diodes fabricated on undoped (a) and Fe-doped (b) p-Si diode prior to and after irradiation.

Figure 5. C-V characteristics of the diodes fabricated on undoped (a) and Fe-doped (b) p-Si prior to and after irradiation. Inset: Rescaled C-V characteristics of proton-irradiated p-Si diode.

Figure 6. C⁻²-V characteristics of the diodes fabricated on undoped (a) and Fe-doped (b) p-Si prior to irradiation and after irradiation.

Table 2. The diode parameters for undoped and Fe-doped p-Si diodes prior to and after proton-irradiation evaluated from $C^{-2}$-V plot.

Diodes		${\mathit{N}}_{\mathbf{A}}$(cm^3)	${\mathit{W}}_{\mathbf{D}}(\mathbf{cm})$
Undoped p-Si	Unirradiated	3.71 × 10^16	1.33 × 10^−5
	Irradiated	3.44 × 10^15	5.42 × 10^−5
Fe-doped p-Si	Unirradiated	1.17 × 10^22	2.21 × 10^−8
	Irradiated	1.85 × 10^22	1.19 × 10^−8