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Radiation Effects and Defects in Solids
Incorporating Plasma Science and Plasma Technology
Volume 165, 2010 - Issue 5
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Original Articles

Radiation hardness of COTS EPROMs and E2PROMs

Miloš Vujisić Faculty of Electrical Engineering, University of Belgrade, Bulevar Kralja Aleksandra 73, P.O. Box 3554, 11000, Belgrade, Serbia
,
Koviljka Stanković Faculty of Electrical Engineering, University of Belgrade, Bulevar Kralja Aleksandra 73, P.O. Box 3554, 11000, Belgrade, Serbia
,
Edin Dolićanin Visoka Ekonomska Škola Strukovnih Studija, 24. Novembra b.b., Leposavić, Serbia
&
Predrag Osmokrović Faculty of Electrical Engineering, University of Belgrade, Bulevar Kralja Aleksandra 73, P.O. Box 3554, 11000, Belgrade, SerbiaCorrespondence[email protected]
Pages 362-369 | Received 02 Nov 2009, Published online: 28 Apr 2010
 
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Abstract

This paper examines and compares the effects of exposing commercial, off the shelf erasable programmable read-only memory (EPROM) and electrically erasable programmable read-only memory (E2PROM) components to gamma rays. Results obtained for CMOS-based EPROM (NM27C010) and E2PROM (NM93CS46) components provide evidence that EPROMs have a greater radiation hardness than E2PROMs. Moreover, the changes in EPROMs are reversible, and after erasure and reprogramming all EPROM components restore their functionality. On the other hand, changes in E2PROMs are irreversible. The obtained results are analyzed and interpreted on the basis of gamma ray interaction with the CMOS structure.

Acknowledgements

The Ministry of Science and Environmental Protection of the Republic of Serbia supported this work under contract no. 141046.

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