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Integrated Ferroelectrics
An International Journal
Volume 65, 2004 - Issue 1
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Original Articles

Formation of Ferroelectric (Bi, Nd)4Ti3O12 Thin Films on HfO2/Si(100) Structures for MFIS-type Ferroelectric Memory Applications

YOSHIAKI TABUCHI Frontier Collaborative Research Center, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama, Japan, 226-8503
,
BYUNG-EUN PARK Department of Electrical and Computer Engineering, University of Seoul, 90 Jeonnong-dong, Seoul, Korea, 130-743
,
KOUZI AIZAWA Precision and Intelligence Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama, Japan, 226-8503
,
YOSHIHITO KAWASHIMA Frontier Collaborative Research Center, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama, Japan, 226-8503
,
KAZUHIRO TAKAHASHI Frontier Collaborative Research Center, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama, Japan, 226-8503
,
KAZUMI KATO National Institute of Advanced Industrial Science and Technology, 2266-98 Anagahora, Moriyama-ku, Nagoya, Japan, 463-8560
,
YOSHIHIRO ARIMOTO Silicon Technology LabâDFUJITSU LABORATORIES LTD., 10-1 Morinosato-Wakamiya, Atsugi, Japan, 243-0197
&
HIROSHI ISHIWARA Frontier Collaborative Research Center, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama, Japan, 226-8503
 show all
Pages 125-134 | Received 01 May 2004, Accepted 01 Aug 2004, Published online: 11 Aug 2010
 
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Abstract

MFIS (metal-ferroelectric-insulator-semiconductor) diodes and transistors having a BNT((Bi, Nd)4Ti3O12)/HfO2/Si (100) structure were fabricated and their data retention characteristics were characterized. HfO2 and BNT thin films were formed by E-B (electron beam) deposition and chemical solution deposition (CSD) methods, respectively. The Pt/BNT/HfO2/Si MFIS diodes showed the hysteretic -V (capacitance-voltage) characteristic and the retention time was as long as 5 days. In the case of the Pt/BNT/HfO2/Si MFIS transistor, the drain current on-off ratio was larger than 104 initially and it was about 1,000 at a time of 1 day after the “write” operation.

ACKNOWLEDGMENTS

This work was performed under the auspices of the R&D Projects in Cooperation with Academic Institutions (Next-Generation Ferroelectrictric Memories) supported by NEDO (New Energy and Industrial Technology Development Organization in Japan) and managed by FED (R&D Association for Future Electron Devices).

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