Abstract
The investigations on the ferroelectric and dielectric properties of vanadium-doped Bi4Ti3O12 ceramics are presented. V-doping did not affect the basic crystal structure of Bi4Ti3O12. However, the degree of the lattice distortion varied with doping, which causes the variation of the internal strain. The sample with the minimized lattice distortion has the largest remnant polarization. The ferroelectric property of Bi4Ti3O12 was significantly improved by doping. The 2P r of Bi4Ti3O12 was 16 μC/cm2, and it reaches a maximum value of 26 μC/cm2 when the vanadium content is 0.03. There were two relaxation peaks (P1, P2) in the dielectric loss (D) curves. The activation of the P1 peak for Bi4Ti3O12 ceramics was 0.66 eV. The P1 and P2 peaks relating to oxygen vacancies reduced with V doping, which give a clue that V-doping restrains the oxygen vacancy concentration. The enlargement of 2P r in V-doped Bi4Ti3O12 is associated with the internal strain and the restraint of oxygen vacancies.
ACKNOWLEDGEMENT
The authors acknowledge the financial support by the National Natural Science Foundation of China (Grant No. 10274066).