Abstract
Fabrication and characterization of metal-ferroelectric-insulator-semiconductor field-effect-transistors (MFIS FETs) using (Y,Yb)MnO3/Y2O3/Si structures were introduced for the first time. P-channel MFIS FETs were fabricated on n-type Si(111) substrates, in which an Y0.5Yb0.5MnO3(200 nm)/Y2O3(25 nm) structure was used as gate insulator. The Y0.5Yb0.5MnO3 and Y2O3 films were prepared by chemical solution deposition. A fabricated MFIS FETs showed the hysteresis loop due to spontaneous polarization in the ID-VGS characteristic, in which the memory window was about 0.9V when the applied gate voltage was swept between 8 V and −8 V. Especially, the alternative drain current was retained after applying a single voltage pulse with a magnitude of +9 V or −9 V.
ACKNOWLEDGEMENTS
This work was performed under the auspices of the R&D projects in Cooperation with Academic Institutions (Next-Generation Ferroelectric Memories), supported by NEDO (New Energy and Industrial Technology Development Organization in Japan) and managed by FED (R&D Association for Future Electron Devices).