Advanced search
Publication Cover
Integrated Ferroelectrics
An International Journal
Volume 65, 2004 - Issue 1
Submit an article Journal homepage
48
Views
2
CrossRef citations to date
0
Altmetric
Original Articles

Sol-Gel Derived Nd-Substituted Bi4Ti3O12 Thin Film and Its Electrical Properties

IK SOO KIM Department of Materials Science Engineering, Korea University, Sungbuk gu, Seoul, Korea, 136-701
,
YOUNG MI KIM Department of Materials Science Engineering, Korea University, Sungbuk gu, Seoul, Korea, 136-701
,
IN-HOON CHOI Department of Materials Science Engineering, Korea University, Sungbuk gu, Seoul, Korea, 136-701
,
SUK-KYOUNG HONG Hynix Semiconductor Inc., San 136-1 Ami-ri Bubal-eub Icheon-si Kyoungki-do, Korea, 467-701
,
WOO SIK KIM Nano-Material Research Center., Korea Institute of Science and Technology, Seoul, 130-650
,
SUN IL SHIM Semiconductor Materials and Devices Lab., Korea Institute of Science and Technology, Seoul, Korea, 130-650
,
YONG TAE KIM Semiconductor Materials and Devices Lab., Korea Institute of Science and Technology, Seoul, Korea, 130-650
&
YOUNG-HWAN KIM Semiconductor Materials and Devices Lab., Korea Institute of Science and Technology, Seoul, Korea, 130-650
 show all
Pages 193-201 | Received 01 May 2004, Accepted 01 May 2004, Published online: 11 Aug 2010
 
Sample our Physical Sciences journals, sign in here to start your FREE access for 14 days

Abstract

Effect of neodymium substitution on the ferroelectric properties of Bi4Ti3O12 was investigated using a sol-gel method. We successfully synthesized 10 wt% homogeneous sol-gel solution of Bi3.15Nd0.85Ti3O12 (BNT) with 12% excess bismuth content. BNT thin films were fabricated on the Pt/TiO2/SiO2/Si substrates by spin coating deposition technique. The final film composition of Bi3.15Nd0.85Ti3O12 was obtained by Rutherford backscattering spectroscopy analysis. The 200-nm-thick BNT films have a strong (117) XRD peak with suppressed (00l) peaks due to the substitution of Nd, and the remanent polarization (2Pr) value of Pt/BNT/Pt structure is 48 μ C/cm2 at 7V, which is significantly greater than those of other ferroelectric thin films such as PZT, SBT and BLT.

ACKNOWLEDGEMENT

This work was supported by the collaborative project of System IC 2010.

Log in via your institution

Access through your institution

Log in to Taylor & Francis Online

Restore content access

Restore content access for purchases made as guest
Purchase options * Save for later

PDF download + Online access

  • 48 hours access to article PDF & online version
  • Article PDF can be downloaded
  • Article PDF can be printed
USD 61.00 Add to cart

Issue Purchase

  • 30 days online access to complete issue
  • Article PDFs can be downloaded
  • Article PDFs can be printed
USD 2,157.00 Add to cart

* Local tax will be added as applicable

Related Research

People also read lists articles that other readers of this article have read.

Recommended articles lists articles that we recommend and is powered by our AI driven recommendation engine.

Cited by lists all citing articles based on Crossref citations.
Articles with the Crossref icon will open in a new tab.