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Abstract
We discuss in this paper our motivations for implementing the high wafer temperature plasma etching of Ferroelectric films. We present results of our work at high wafer temperature. We present details showing an effective combination of the capabilities of dual frequency plasma etching with high wafer temperature etching in a capacitively coupled plasma reactor. These capabilities allow fine-line geometries to be etched for advanced FeRAM structures. We show an optimized combination of near-vertical profile results with good electrical results.