Key Integration Techniques and Issues for Silicon-Based Ferroelectric Devices

Abstract

Some key integration techniques and issues have been discussed in this paper including fabrication techniques of ferroelectric films, electrode, interface and diffusion problems, etching techniques, stress, hydrogen-induced degradation and barrier interlayer technique, impact of the ferroelectric processing on silicon devices and packaging for the integrated ferroelectric devices. Mechanisms for the breakdown of ferroelectric devices have been analyzed and improved ways have been suggested.

Keywords:

• Integration
• thin film
• silicon-based ferroelectric device
• IC compatible

ACKNOWLEDGMENTS

Thanks for the financial support by the National 973 Project (G1999033105) of China.