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Integrated Ferroelectrics
An International Journal
Volume 66, 2004 - Issue 1
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Original Articles

Fabrication of Ferroelectric Thin Films With Alternate Deposition of Multilayers

JINGSONG LIU School of Microelectronics and Solid-State Electronics University of Electronic Science and Technology of China, Chengdu, People's Republic of China
,
SHUREN ZHANG School of Microelectronics and Solid-State Electronics University of Electronic Science and Technology of China, Chengdu, People's Republic of China
,
SHUIQIN ZHANG School of Microelectronics and Solid-State Electronics University of Electronic Science and Technology of China, Chengdu, People's Republic of China
&
CHENGTAO YANG School of Microelectronics and Solid-State Electronics University of Electronic Science and Technology of China, Chengdu, People's Republic of China
Pages 115-122 | Received 01 Apr 2004, Accepted 01 Aug 2004, Published online: 12 Aug 2010
 
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Abstract

Pb(Zr0.52Ti0.48)O3 (PZT) and SrBi2Ta2O9 (SBT) films have been fabricated onto Pt/Ti/SiO2/Si substrates with a new chemical solution deposition (CSD) technique, in which PbZrO3(PZ)/PbTiO3(PT) and SrTa2O6(ST)/Bi2O3(B) precursors were spin-coated and heated individually. Polycrystalline PZT and SBT films were formed through the reactions between the multilayers at relative low temperatures, without post-annealing. With the aid of AFM, an island-column hybrid growth mode and a nucleus growth mode were suggested for the PZT and SBT film growths, respectively. However, it was found that the deposition orders affected substantially the microstructure of SBT films. This study suggests that the processing temperatures for the ferroelectric film fabrications can be reduced with alternate deposition of multilayers.

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