Abstract
We realized in this study RF capacitors of PZT, STO and SiO2 integrated on Si substrate. An RLC series model fits well with the electrical results of the MIM capacitors at RF frequencies. A comparison between RF and LF measurements shows that STO and PZT exhibit a little decrease (10% max) of the dielectric constant at GHz frequencies. One field of application of these capacitors can be decoupling capacitors.