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Integrated Ferroelectrics
An International Journal
Volume 67, 2004 - Issue 1
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Original Articles

Growth of Pyrochlore Bi2Ti2O7 Epitaxial Films and Their Electrical Characterization

Muneyasu Suzuki Department of Innovative and Engineered Materials, Tokyo Institute of Technology, 4259-G1-32 Nagatsuta-cho, Midori-ku, Yokohama, Japan
,
Takayuki Watanabe Department of Innovative and Engineered Materials, Tokyo Institute of Technology, 4259-G1-32 Nagatsuta-cho, Midori-ku, Yokohama, Japan
,
Tadashi Takenaka Faculty of Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda-City, Japan
&
Hiroshi Funakubo Department of Innovative and Engineered Materials, Tokyo Institute of Technology, 4259-G1-32 Nagatsuta-cho, Midori-ku, Yokohama, Japan
Pages 201-209 | Received 01 May 2004, Accepted 01 May 2004, Published online: 12 Aug 2010
 
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Abstract

Epitaxial growth condition of Bi2Ti2O7 films on the substrates having rutile-structure was investigated. TiO2 single crystals and the conductive epitaxial IrO2layers having same rutile-structure were used as substrates for film deposition. Strongly (111)-oriented Bi2Ti2O7 films were confirmed to be deposited on (110) TiO2 substrates by XRD θ-2θ scans, but obvious orientations were not detected on (100), (001) and (110) TiO2 substrates. The epitaxial growths of Bi2Ti2O7 films were confirmed on (100), (001) and (110) TiO2 substrates, where two variants were observed on (100) and (110) TiO2 substrates. The epitaxial relationships were confirmed as follows; (14 14 19)Bi2Ti2O7//(100)TiO2, (112)Bi2Ti2O7//(101)TiO2, and (111)Bi2Ti2O7//(110)TiO2. Same epitaxial growth was confirmed only on (110)IrO2//(110)TiO2 substrate, but not on (101)IrO2//(012)Al2O3 and (100)IrO2//(100)TiO2 substrates. The dielectric constant and loss tangent at 1 kHz were 130 and 2%, respectively for the 130 nm-thick epitaxial Bi2Ti2O7 film grown on (110)IrO2//(110)TiO2 substrate.

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