FORMATION OF (Bi,La)₄Ti₃O₁₂ FILMS ON Si(100) SUBSTRATES USING ZrO₂ BUFFER LAYERS

ABSTRACT

The ferroelectric behavior of (Bi,La)₄Ti₃O₁₂ (BLT) films deposited on Si(100) substrates with the use of ZrO₂ buffer layers was demonstrated. ZrO₂ films were prepared using the sol-gel method. Then, they were subjected to dry O₂ annealing in a rapid-thermal-annealing furnace. BLT films were deposited on these structures through the sol-gel method, and they were characterized through X-ray diffraction analysis and atomic-force microscopy. It was found from capacitance-voltage measurements that the BLT films had a hysteresis loop and that the memory window was about 2 V for the voltage sweep of ±5 V. Based on these results, it can be concluded that the use of the BLT/ZrO₂/Si(100) structure in the fabrication of MFISFETs (metal-ferroelectric-insulator-semiconductor field-effect transistors) holds great promise.

Keywords:

• BLT
• ZrO₂
• memory window
• MFIS structure
• FeRAM