ABSTRACT
PZT thin films on the interlayer (TiO2) and Si substrate were fabricated by the r.f. magnetron-sputtering method. As a result of the EPMA analysis, we can conclude that the TiO2 thin film decrease Pb volatilization. TiO2 interlayer and PZT thin film were investigated by interface analysis of Glow Discharge Spectrometer (GDS) and observed to be independent layers respectively. Interlayer (TiO2) between PZT and Pt affected as seed layer of thin film and decreased crystallization temperature. Compared to the PZT thin films with TiO2 interlayer without post-annealing, the films with TiO2 interlayer annealed by RTA furnace showed prevailing ferroelectric properties.
ACKNOWLEDGMENTS
This work was supported by grant the Korea Basic Science Institute, Busan Branch.