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Integrated Ferroelectrics
An International Journal
Volume 78, 2006 - Issue 1
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SECTION A2: MODELING AND THEORY

RESEARCH OF THE FATIGUE MODEL OF PZT FERROELECTRIC THIN FILMS

FUGUI CHEN School of Microelectronics and Solid-State Electronics, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
,
CHENGTAO YANG School of Microelectronics and Solid-State Electronics, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
,
SHUREN ZHANG School of Microelectronics and Solid-State Electronics, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
,
JINSONG LIU School of Microelectronics and Solid-State Electronics, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
&
ZHAOMING TIAN School of Microelectronics and Solid-State Electronics, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
Pages 3-8 | Received 17 Apr 2005, Accepted 23 Jan 2006, Published online: 12 Oct 2011
 
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ABSTRACT

There is a high electric field exists at the interface layer between electrode and ferroelectric film, electrons can be injected into the ferroelectric film through the interface layer from the electrode. Besides, oxygen vacancies re-arrangement can cause the ferroelectric fatigue during the process of the electron injection. Considering the two factors above, we proposed the ferroelectric fatigue model, and the simulation result matched the experimental result perfectly.

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