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Integrated Ferroelectrics
An International Journal
Volume 85, 2006 - Issue 1
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SECTION C: FeRAM MATERIALS: MATERIALS CHARACTERIZATION

IMPRINT AND FATIGUE PROPERTIES OF Pt/Pb(Zr0.4Ti0.6)O3/Pt CAPACITOR

ZE JIA Institute of Microelectronics, Tsinghua University, Beijing, 100084, China
,
TIAN-ZHI LIU Institute of Microelectronics, Tsinghua University, Beijing, 100084, China
,
HONG HU Institute of Microelectronics, Tsinghua University, Beijing, 100084, China
,
TIAN-LING REN Institute of Microelectronics, Tsinghua University, Beijing, 100084, China
,
ZHI-GANG ZHANG Institute of Microelectronics, Tsinghua University, Beijing, 100084, China
,
DAN XIE Institute of Microelectronics, Tsinghua University, Beijing, 100084, China
&
LI-TIAN LIU Institute of Microelectronics, Tsinghua University, Beijing, 100084, China
 show all
Pages 67-75 | Received 31 May 2006, Published online: 14 Feb 2007
 
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ABSTRACT

Imprint and fatigue properties of Pb(Zr0.4Ti0.6)O3film prepared by sol-gel spin coating method in Pt/PZT/Pt capacitors are studied in this experiment. The voltage shift of hysteresis loops of Pt/PZT/Pt capacitors under DC voltage bias and fatigue stress are investigated at room temperature. It is shown that the absolute values of voltage shift of hysteresis loops decrease with the increasing positive bias voltage. Both the absolute and relative shifts of coercive voltage increase with the increase of fatigue stress. The properties above can be explained by the formation and change of oxide layer at PZT/electrode interface under fatigue stress and correlative theories and models.

ACKNOWLEDGMENTS

This work is supported by National Natural Science Foundation of China (90407023), and “863” Program of China (2004AA404240). The authors would like to thank Mr. Liu Hua-rui and Mr. Li Wei, for their help and discussion in this experiment. The authors would like to thank Ms Lue Feng for her help at figure processing, especially.

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