NANOMIXED TiO₂-Ga₂O₃ THIN FILMS GROWN BY PLASMA ENHANCED ATOMIC LAYER DEPOSITION (PEALD) METHOD

ABSTRACT

Various TiO₂-Ga₂O₃ nanomixed thin films were prepared by plasma enhanced atomic layer deposition with alternating supplies of reactant sources, Ti[N(CH₃)₂]₄, [(CH)₂GaNH₂]₃ and oxygen plasma. The surface morphologies of the thin films indicated that the nanomixed thin films were uniform and smooth. Ga and Ti were uniformed distributed on entire nanomixed thin film, and no carbon contaminations were detected inside the thin film. The electrical properties of Pt/film/Si structure were investigated. The first layer of the nanomixed thin films with different materials annealed at same conditions showed the different behaviors. Transmittances of the nanomixed thin films deposited on quartz substrates were also investigated, and the band gap energies were calculated by fitting the absorption edge of the transmittance spectra.

Keywords:

• Nanomixed thin films
• PEALD
• capacitance
• leakage current
• transmittance
• bandgap

ACKNOWLEDGMENTS

This work was supported by Electronic Ceramics Center at DongEui University as an RIC program of ITEP under MOCIE and Busan Metropolitan City.