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Integrated Ferroelectrics
An International Journal
Volume 88, 2007 - Issue 1
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SECTION I: MEMS, PYROELECTRIC/IR, OPTOELECTRONIC MATERIALS: THIN-FILM PROCESSING

A STUDY ON FERROELECTRIC PVDF ULTRATHIN FILMS PREPARED BY LB TECHNIQUE

YADONG JIANG School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu, 610054, P.R. China
,
YUN YE School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu, 610054, P.R. China
,
JUNSHENG YU School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu, 610054, P.R. China
,
YAJIE YANG School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu, 610054, P.R. China
,
JIANHUA XU School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu, 610054, P.R. China
&
ZHIMING WU School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu, 610054, P.R. China
Pages 21-26 | Received 31 May 2006, Published online: 12 Oct 2011
 
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ABSTRACT

Langmuir–Blodgett (LB) deposition technique of ferroelectric films has been employed to obtain highly ordered monomolecular films with densely packed structure for the application of molecule-based electronic devices. The ferroelectric poly (vinylidene fluoride) (PVDF) LB ultrathin films were prepared on a quartz substrate using ultra-pure water as the subphase. The PVDF ultrathin film was characterized by FT-IR spectrum. It shows a weak narrow peak at 510 cm−1 and an intense peak at 840 cm−1, which are ascribed to β phase of PVDF. The ferroelectric properties have been investigated. The results indicate that the dipoles of PVDF LB ultrathin film have been oriented in the directions of perpendicular to the film surface, while spread on the subphase and compressed with LB technique.

ACKNOWLEDGMENTS

The authors gratefully acknowledge the financial fund supported by National Science Fund of China Distinguished Young Scholars, No. 60425101.

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