FABRICATION AND CONDUCTIVE CHARACTERISTIC OF HIGHLY ORIENTED LANIO₃ THIN FILMS

ABSTRACT

LaNiO₃ thin films were fabricated on Si substrates by sol-gel method under different annealing temperatures. The XRD pattern showed that the films annealed at 700°C were single perovskite phase and highly (200) oriented. Dense and homogeneously distributed surface was observed using AFM, the average grain size and the root mean square roughness (RMS) of the sample are 83.67 nm and 5.06 nm, respectively. It was also revealed that the electrical property of the films mainly depended on the crystallite size of LNO, the resistivity and sheet resistance of the LNO thin films annealed at 700°C are 0.0037 Ω · cm and 76 Ω /□, respectively.

Keywords::

• LaNiO₃ thin films
• sol-gel method
• highly oriented
• resistivity
• sheet resistance