Characteristics of BaNb₂O₆ Thin Films Made by MOCVD using Ultrasonic Nebulization

Abstract

In this study, BaNb₂O₆ thin films were deposited on Pt/Ti/SiO₂/Si substrates by MOCVD using ultrasonic nebulization and their deposition characteristics and electrical properties were investigated. The composition of thin films was controlled by changing the molar ratio of Ba/Nb source in the source solution and the deposition temperature. The BaNb₂O₆ single phase thin films could be prepared using a source solution with the concentration of 0.07 mol/l Ba-source and 0.105 mol/l Nb-source at the substrate temperature of 350°C. The dielectric constant of the film was about 86. The current density was 6.740 × 10⁻⁷ A/cm² at −10 V and 1.075 × 10⁻⁶ A/cm² at +10 V. Also, the remanent polarization was 0.302 μC/cm² and the coercive force was 31.523 kV/cm.

Keywords:

• Thin Films
• BaNb₂O₆
• MOCVD