Electrical Properties of (Bi_0.9Ho_0.1)(Fe_0.975Cr_0.025)O₃ Thin Films Prepared by Using a Chemical Solution Deposition

Abstract

Bismuth ferrite BiFeO₃ (BFO) and holmium (Ho)-chromium (Cr) co-doped bismuth ferrite (Bi_0.9Ho_0.1)(Fe_0.975Cr_0.025)O₃, (BHFCr) thin films were deposited on Pt(111)/Ti/SiO₂/Si substrates by using a chemical solution deposition method. Effects of Ho and Cr co-doping on the micro-structures, ferroelectric properties and leakage current densities of the thin films were investigated. The single-phase rhombohedral perovskite structures of the thin films were confirmed by an X-ray diffraction analysis. From the electrical property studies, the BHFCr thin film showed enhanced electrical properties compared to the BFO thin film. The improved electrical properties of the BHFCr thin film are correlated with greatly improved microstructure, stabilization of the perovskite structure and defects compensation.

Keywords:

• BiFeO₃ thin film
• chemical solution deposition
• electrical properties

Acknowledgments

This work was supported by Priority Research Centers Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (2010-0029634).