Expanded Characterization of the Common-Drain Amplifier Using Metal-Ferroelectric-Semiconductor Field Effect Transistors

Abstract

Data is presented in this paper that was obtained using a metal-ferroelectric-semiconductor field effect transistor (MFSFET) in a common-drain amplifier configuration. The empirical data shown has been collected using larger drain voltages than previously seen, which helps to further understand and characterize the interesting operation of this amplifier circuit. The effects of varying different parameters such as load resistance, poling voltage, and input voltages of the amplifier circuit are examined. Differences between the MFSFET and MOSFET common-drain amplifier configurations are explored in-depth.

Keywords:

• MFSFET
• MFFET
• metal-ferroelectric-semiconductor field effect transistor
• FeFET
• FFET
• ferroelectric transistor
• common-drain amplifier