![Sample our Physical Sciences journals, sign in here to start your FREE access for 14 days]({"type":"image" , "src" : "/sda/110819/TOC-Subject-Sample-2021-Physical-Sciences.jpg"})
ABSTRACT
In this paper, we are presenting the results on tunable and switchable graded composition BaxSr1-xTiO3 (x = 0.6 to 0.90) film bulk resonators (FBARs) based on Silicon dioxide/Tantalum oxide Bragg reflectors. The Bragg reflectors can withstand high temperatures of about 800°C during annealing of graded barium Strontium Titanate (BST) film. BST films as well as Bragg reflectors were all deposited by spin on technique. The DC bias-dependent resonance frequency due to electro-restriction of the graded BST film decreases with increasing bias field and the tunability is about 2% for an applied bias voltage of 14 V. The calculated electromechanical coefficient for these resonators increases with applied bias and the maximum value of 12.5% is reached for a bias voltage of 10 V. The maximum quality factor ‘Q’ for these devices was 80 at a bias voltage of 13 V.