Influence of Zr/Sn ratio on the Transverse Piezoelectric Coefficient |e31,f| in Lanthanum-Doped Lead Zirconate Titanate Stannate Thin Films

Abstract

In this study, we report the effect of Zr/Sn ratio on the Antiferroelectric (AFE) → Ferroelectric (FE) phase transition and transverse piezoelectric characteristics on AFE thin films of compositions having the general formula Pb_0.97La_0.02(Zr_1-x+ySn_xTi_y)O₃, where y = 0.10 and 0.10 ≤ x ≤ 0.15 along the phase boundary in the ternary system Pb(Zr_0.50Ti_0.50)O₃-Pb(Zr_0.50Sn_0.50)O₃-PbZrO₃. Thin films having a thickness of 2.0 µm were fabricated on platinised silicon substrates by sol–gel method. Data obtained from dielectric, ferroelectric and structural studies have been combined to explain the mechanism of AFE → FE switching.

Keywords:

• Piezoelectric thin films
• sol–gel processes
• domain structure
• phase transitions

Acknowledgements

One of the authors, Laxmi Priya S is grateful to University Grants Commission, Govt. of India, for the Senior Research Fellowship.