Thermoelectric transport properties of semiconductor film-based epitaxial monolayer graphene

Figures & data

Figure 1. Top (a) and side (b) views of a semiconductor film-based epitaxial monolayer graphene structure.

Table 1. Values of physical quantity.

Physical quantity	Value
d0	1.42×10^−10 m
V1	2.08 eV
V2	12.32 eV
R	10.08 eV ∙ (10^−10 m)^12
a0	3.5388×10^2 J∙m^−2
a1	−3.49725×10^12 J∙m^−3
a2	3.20140×10^22 J∙m^−4
S1	2.6193×10^−20 m^2
L	60×10^−10 m
L1	2.69×10^−10 m
ρ0	2.93536×10^−10 m ∙ (eV)^−1
Δ	1.17(1–1×10^−4 T) eV
V0	2 eV
εi	i^2×1.047×10^−2 eV
l0	2.593×10^−4 m
s	21.04×10^3 m ∙ s^−1

Figure 2. ${\mathrm{\Gamma }}_C\left(\epsilon \right)$and $\mathrm{\Lambda }\left(\epsilon \right)$with energy$\epsilon$for different semiconductor film thicknesses.

Figure 3. Variation of β_e with chemical potential (a) and temperature (b).

Figure 4. Variation of β_ph with temperature (a), variation of β with temperature (b) and semiconductor film thickness (c).

Table 2. Thermopower β of epitaxial monolayer graphene on different substrates.

β on semiconductor film	409.6 μV·K^−1	400 μV·K^−1 [6]
β on metal conductor film	200 μV·K^−1 [7]	–
β on semiconductor bulk	75 μV·K^−1 [19]	–

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